2010-04-06 1 bfr182w 1 2 3 npn silicon rf transistor ? for low noise, high-gain broadband amplifiers at collector currents from 1 ma to 20 ma ? f t = 8 ghz, f = 0.9 db at 900 mhz ? pb-free (rohs compliant) package ? qualified according aec q101 esd ( e lectro s tatic d ischarge) sensitive device, observe handling precaution! type marking pin configuration package bfr182w rgs 1=b 2=e 3=c sot323 maximum ratings at t a = 25 c, unless otherwise specified parameter symbol value unit collector-emitter voltage v ceo 12 v collector-emitter voltage v ces 20 collector-base voltage v cbo 20 emitter-base voltage v ebo 2 collector current i c 35 ma base current i b 4 total power dissipation 1) t s 90 c p tot 250 mw junction temperature t j 150 c ambient temperature t a -55 ... 150 storage temperature t st g -55 ... 150 thermal resistance parameter symbol value unit junction - soldering point 2) r thjs 240 k/w 1 t s is measured on the collector lead at the soldering point to the pcb 2 for calculation of r thja please refer to application note thermal resistance
2010-04-06 2 bfr182w electrical characteristics at t a = 25c, unless otherwise specified parameter symbol values unit min. typ. max. dc characteristics collector-emitter breakdown voltage i c = 1 ma, i b = 0 v (br)ceo 12 - - v collector-emitter cutoff current v ce = 4 v, v be = 0 v ce = 15 v, v be = 0 v, t a = 85 c (verified by random sampling) i ces - - 1 5 30 70 na collector-base cutoff current v cb = 4 v, i e = 0 i cbo - 1 30 emitter-base cutoff current v eb = 1 v, i c = 0 i ebo - - 50 dc current gain i c = 10 ma, v ce = 8 v, pulse measured h fe 70 100 140 -
2010-04-06 3 bfr182w electrical characteristics at t a = 25c, unless otherwise specified parameter symbol values unit min. typ. max. ac characteristics (verified by random sampling) transition frequency i c = 15 ma, v ce = 8 v, f = 500 mhz f t 6 8 - ghz collector-base capacitance v cb = 10 v, f = 1 mhz, v be = 0 , emitter grounded c cb - 0.34 0.5 pf collector emitter capacitance v ce = 10 v, f = 1 mhz, v be = 0 , base grounded c ce - 0.26 - emitter-base capacitance v eb = 0.5 v, f = 1 mhz, v cb = 0 , collector grounded c eb - 0.8 - noise figure i c = 3 ma, v ce = 8 v, z s = z sopt , f = 900 mhz i c = 3 ma, v ce = 8 v, z s = z sopt , f = 1.8 ghz f - - 0.9 1.3 - - db power gain, maximum stable 1) i c = 10 ma, v ce = 8 v, z s = z sopt , z l = z lopt , f = 900 mhz g ms - 19 - db power gain, maximum available 2) i c = 10 ma, v ce = 8 v, z s = z sopt , z l = z lopt , f = 1.8 ghz g ma - 12.5 - db transducer gain i c = 10 ma, v ce = 8 v, z s = z l = 50 ? , f = 900 mhz i c = 10 ma, v ce = 8 v, z s = z l = 50 ? , f = 1.8 ghz | s 21e | 2 - - 15.5 10 - - db 1 g ms = | s 21 / s 12 | 2 g ma = | s 21e / s 12e | (k-(k2-1) 1/2 )
2010-04-06 4 bfr182w total power dissipation p tot = ? ( t s ) 0 20 40 60 80 100 120 c 150 t s 0 50 100 150 200 mw 300 p tot permissible pulse load r thjs = ? ( t p ) 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s t p 1 10 2 10 3 10 k/w r thjs 0.5 0.2 0.1 0.05 0.02 0.01 0.005 d = 0 permissible pulse load p totmax / p totdc = ? ( t p ) 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s t p 0 10 1 10 2 10 - p totmax / p totdc d = 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5
2010-04-06 5 bfr182w spice parameter for the spice model as well as for the s-parameters (including noise parameters) please refer to our internet website www.infineon.com/rf.models .
2010-04-06 6 bfr182w package sot323 package outline foot print marking layout (example) standard packing reel ?180 mm = 3.000 pieces/reel reel ?330 mm = 10.000 pieces/reel 1.25 0.1 0.1 max. 2.1 0.1 0.15 +0.1 -0.05 0.3 +0.1 0.1 0.9 12 3 a 0.2 2 -0.05 0.65 0.65 m 3x 0.1 0.1 min. 0.1 m 0.2 a 0.2 4 2.15 1.1 8 2.3 pin 1 pin 1 2005, june date code (ym) bcr108w type code 0.6 0.8 1.6 0.65 0.65 manufacturer
2010-04-06 7 bfr182w edition 2009-11-16 published by infineon technologies ag 81726 munich, germany ? 2009 infineon technologies ag all rights reserved. legal disclaimer the information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. with respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, infineon technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. information for further information on technology, delivery terms and conditions and prices, please contact the nearest infineon technologies office ( ). warnings due to technical requirements, components may contain dangerous substances. for information on the types in question, please contact the nearest infineon technologies office. infineon technologies components may be used in life-support devices or systems only with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
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